IRGMC50F transistor equivalent, insulated gate bipolar transistor.
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* Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz Switching-loss rating.
The performance of various IGBTs varies greatly with frequency. Note that IR now provides the designer with a speed ben.
n-channel
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. .
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